Dr. M. Wenderoth

IV. Physikalisches Institut Georg-August Universität Göttingen Friedrich-Hund-Platz 1 37077 Göttingen, GERMANY

Tel: +49 551 39-9367 Fax: +49 551 39-4560 Email: wendero@physik4.gwdg.de

Prof. Dr. Rainer G. Ulbrich

IV. Physikalisches Institut Georg-August Universität Göttingen Friedrich-Hund-Platz 1 37077 Göttingen, GERMANY

Tel: +49 551 39-4541 Fax: +49 551 39-4560 Email: ulbrich@ph4.physik.uni-goettingen.de

Electrical Transport Involving Evanescent States in III-V Semiconductors: The Role of Spin-Orbit-Coupling

We propose to study the effect of spin-orbit-coupling on evanescent states concomitant with semiconductor interfaces and surfaces. Its influence on spin transport of charge carriers through tunneling channels will be investigated. For semiconductor systems this issue has only recently been addressed theoretically. Bloch states with real wave vectors and energies close to the band edges have energy splittings which are � in general � relatively small. It came as a surprise that these effects are greatly enhanced when complex k-vectors are considered. We have shown experimentally that resonant enhancement of the tunnel current by a dopant atom allows to study the evanescent states on the nanometer scale and may be utilized as an efficient spin filter.