Prof. Dr. Peter Vogl

Technische Universität München Walter Schottky Institut Am Coulombwall 3 85748 Garching

Tel: 089 / 289 12750 Fax: 089 / 289 12737 Email: vogl@wsi.tum.de

Microscopic theory of spin-splittings and ballistic spin currents in semiconductor nanostructures

This project aims at predicting ultimate limits of spin-orbit induced magnetizations, intrinsic spin precession times, and spin-polarized ballistic electron currents in two-dimensional electron gases. Our theoretical approaches are based on a combination of ab-initio and semiempirical electronic structure methods, a spin-dependent ballistic quantum transport theory and a sophisticated non-equilibrium Green�s function approach for open quantum devices. In close collaboration with several experimental groups in this priority program, we will study the dependence of spin-splittings near conduction and valence subband edges on material composition, confinement, strain, doping, and applied electric fields, and use these detailed results to predict Haas-van Alphen and Shubnikov-de-Haas spectra for III-V heterostructures, superlattices and HFET structures. In addition, we calculate ballistic charge and spin currents as a function of applied bias and magnetic fields in laterally confined InAs/GaSb/GaAs-based ballistic electron systems and design structures that can produce spin-polarized electrons by spin-selective scattering off interfaces, barriers and constrictions.