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Schwerpunktprogramm SPP 1285
Halbleiter Spintronik
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Prof. Dr. Jaroslav Fabian

Institute for Theoretical Physics
University Regensburg
93040 Regensburg

Tel.:(49-941) 943 2031
Fax:(49-941) 943 4382
Theory of spin relaxation and spin dynamics in silicon: from bulk to quantum dots.

Silicon has thus far found only limited application in spintronics. Electrical spin injection into silicon is yet to be proven and fabrication technology for silicon quantum dots with electron density controllable electrostatically by top gates lags behind similar technology for GaAs. Nevertheless, silicon is a spintronics material with which one has to count. Spintronics should be as closely related to the existing silicon information technology as possible, for integration purposes, and spin materials properties of silicon are superior to GaAs. Indeed, the weaker spin-orbit coupling in silicon leads to much smaller spin relaxa-tion rates, as well as to much weaker effective interface spin-orbit interactions. Furthermore, silicon can be isotopically purified to inhibit the hyperfine interaction which is a leading decoherence channel. The project will systematically evaluate spin relaxation in bulk silicon as well as in silicon lateral quantum dots, both single and coupled. Realistic calcu-lations will be performed to obtain impurity and phonon-induced spin relaxation in the bulk, at different donor doping levels and temperatures. Such calculations are particularly useful in the absence of systematic experimental studies. Theory of spin relaxation and spin dynamics in silicon quantum dots will be developed. Anisotropy of the spin relaxation rates as well as of couplings of the orbital and spin states to external microwave fields will be investigated in relation to possible applications of the silicon dots in spin-based quantum information processing.


Wichtige Termine:

15. Sept. 2013:
Deadline für den Sonderband Semiconductor Spintronics (DFG-Abschlussbericht) in physica status solidi b
(nähere Informationen wurden per Email zugeschickt)

30. Sept. - 2. Okt. 2013:
Abschlusstreffen des Schwerpunktprogramms "International workshop on semiconductor spintronics" in der Residenz Würzburg
(nähere Informationen)

Aktuelle Veröffentlichung(en):

C. Drexler, S.A. Tarasenko, P. Olbrich, J. Karch, M. Hirmer, F. Müller, M. Gmitra, J. Fabian, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Wang, R. Vajtai, P. M. Ajayan, J. Kono, and S.D. Ganichev :  "Magnetic quantum ratchet effect in graphene" Nature Nanotechnology 8, 104 (2013)

J.H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A.D. Wieck, and D. Hägele:  "Long electron spin coherence in ion‐implanted GaN: The role of localization" Appl. Phys. Lett. 102, 192102 (2013)

D.J. English, J. Hübner, P.S. Eldridge, D. Taylor, M. Henini, R.T. Harley, and M. Oestreich:  "Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells" Phys. Rev. B 87, 075304 (2013)

V.L. Korenev, I.A. Akimov, S.V. Zaitsev, V.F. Sapega, L. Langer, D.R. Yakovlev, Yu. A. Danilov, and M. Bayer:  "Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid" Nature Communications 3, 959 (2012)

M. Althammer, E.-M. Karrer-Müller, S.T.B. Goennenwein, M. Opel, R. Gross:  "Spin transport and spin dephasing in zinc oxide" Appl. Phys. Lett. 101, 082404 (2012)