DFG Logo
Priority Program SPP 1285
Semiconductor Spintronics
Spintronic > State of Research > Literature

Literature

Selected publications on "semiconductor spintronics". This is a list of publications by German groups, which will soon be expanded.

  1. R. Winkler and M. Oestreich, "Spintronik," Physik Journal, vol. 3, no. 11, pp. 39, Nov. 2004.
  2. M. I. Dyakonov and V. I. Perel, "Theory of optical spin orientation of electrons and nuclei in semiconductors," in Optical Orientation, F. Meier and B. P. Zakharchenya, Eds., chapter 2, pp. 11-71. Elsevier, Amsterdam, 1984.
  3. S. D. Ganichev, E. L. Ivchenko, V. V. Belkov, S. A. Tarasenko, M. Sollinger, D. Weiss, W. Wegscheider, and W. Prettl, "Spin-galvanic effect," Nature, vol. 417, pp. 153-156, 2002.
  4. S. D. Ganichev, S. N. Danilov, V. V. Belkov, E. L. Ivchenko, M. Bichler, W. Wegscheider, D. W. Weiss, and W. Prettl, "Spin sensitive bleaching and monopolar spin orientation in quantum wells," Phys. Rev. Lett., vol. 88, pp. 057401-1 - 057401-4, 2002.
  5. S. D. Ganichev, S. N. Danilov, J. Eroms, W. Wegscheider, D. W. Weiss, W. Prettl, and E. L. Ivchenko, "Conversion of spin into directed electric current in quantum wells,"Phys. Rev. Lett., vol. 86, pp. 4358 - 4361, 2001.
  6. S. D. Ganichev and W. Prettl, "Spin photocurrent in quantum wells," J. Phys.: Condens. Matter (Topical Review), vol. 15, pp. R935-R983, 2003.
  7. D. R. Yakovlev, A. V. Platonov, E. L. Ivchenko, V. P. Kochereshko, C. Sas, W. Ossau, L. Hansen, A. Waag, G. Landwehr, and L. W. Molenkamp, "Hidden in-plane anisotropy of interfaces in ZnMnSe/BeTe quantum wellswith a type II band aligment," Phys.Rev.Lett., vol. 88, pp. 257401-1 - 257401-4, 2002.
  8. J. Hübner, W. W. Rühle, M. Klude, D. Hommel, R. D. R. Bhat, J. E. Sipe, and H. M. van Driel, "Direct observation of optically injected spin-polarized currents in semiconductors," Phys. Rev. Lett., vol. 90, pp. 216601-1 - 216601-4, 2003.
  9. D. Hägele, J. Hübner, W. W. Rühle, and M. Oestreich, "Coherent dynamics of coupled electron and hole spins in semiconductors," Solid State Commun., vol. 120, pp. 73-78, 2001.
  10. X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, "Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100)," Phys. Rev. Lett., vol. 94, pp. 056601, 2005.
  11. G. Schmidt, D. Ferrand, L. Molenkamp, A. T. Filip, and B. J. van Wees, "Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusivesemiconductor," Phys. Rev. B, vol. 62, pp. R4790-4793, 2000.
  12. G. Schmidt, C. Gould, P. Grabs, A. M. Lunde, G. Richter, A. Slobodskyy, and L. W. Molenkamp, "Spin injection in the nonlinear regime: Band bending effects," Phys. Rev. Lett., vol. 92, pp. 226602-1 - 226602-4, 2004.
  13. V. Y. Kravchenko and E. I. Rashba, "Spin injection into a ballistic semiconductor microstructure," Phys. Rev. B, vol. 67, pp. 121310-1 - 121310-4, 2003.
  14. E. Goering, A. Bayer, S. Gold, G. Schütz, M. Rabe, U. Rüdiger, and G. Güntherodt,"Strong anisotropy of projected 3d moments of an epitaxial CrO2 film," Phys. Rev. Lett., vol. 88, pp. 207203-1 - 207203-4, 2002.
  15. C.-M. Hu and T. Matsuyama, "Spin injection across a heterojunction: A ballistic picture," Phys. Rev. Lett., vol. 87, pp. 066803-1 - 066803-4, 2001.
  16. H. Ohno, D. Chiba, F. Matsukura, T. O. E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, "Electric-field control of ferromagnetism," Nature, vol. 408, pp. 944-946, 2000.
  17. S. T. B. Goennenwein, T. A. Wassner, H. Huebl, M. S. Brandt, J. B. Philipp, M. Opel, R. Gross, W. Koeder, W. Schoch, and A. Waag, "Hydrogen control of ferromagnetism in a dilute magnetic semiconductor," Phys. Rev. Lett., vol. 92, pp. 227202-1 - 227202-4, 2004.
  18. V. V. Osipov, N. A. Viglin, and A. A. Samokhvalov, "Investigation of heterostructure ferromagnetic semiconductor-semiconductor in the millimeter and submillimeter microwave range," Phys. Lett. A, vol. 247, pp. 353-359, 1998.
  19. M. Oestreich, J. Hübner, D. Hägele, P. J. Klar, W. Heimbrodt, W. W. Rühle, D. E. Ashenford, and B. Lunn, "Spin injection into semiconductors," Appl. Phys. Lett., vol. 74, pp. 1251-1253, 1999.
  20. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, "Injection and detection of a spin-polarized current in a light-emitting diode," Nature, vol. 402, pp. 787-790, 1999.
  21. Th. Gruber, M. Keim, R. Fiederling, G. Reuscher, W. Ossau, G. Schmidt, L. W. Molenkamp, and A. Waag, "Electron spin manipulation using semimagnetic resonant tunneling diodes," Appl. Phys. Lett., vol. 78, pp. 1101-1103, 2001.
  22. T. Dietl, "Ferromagnetic semiconductors," Semicond. Sci. Technol., vol. 17, pp. 377-392, 2002.
  23. J. König, J. Schliemann, T. Jungwirth, and A. H. MacDonald, "Electronic structure and magnetism of complex materials," pp. 163-211. Springer, Berlin, 2003.
  24. C. Timm, F. Schäfer, and F. von Oppen, "Comment on "effects of disorder on ferromagnetism in diluted magnetic semiconductors"," Phys. Rev. Lett., vol. 90, pp. 029701, 2003.
  25. C. Timm, F. Schäfer, and F. von Oppen, "Correlated defects, metal-insulator transition, and magnetic order in ferromagnetic semiconductors," Phys. Rev. Lett., vol. 89, pp. 137201-1 - 137201-4, 2002.
  26. J. König, H. H. Lin, and A. H. MacDonald, "Theory of diluted magnetic semiconductor ferromagnetism," Phys. Rev. Lett., vol. 84, pp. 5628-5631, 2000.
  27. J. König and J. Martinek, "Interaction-driven spin precession in quantum-dot spin valves," Phys. Rev. Lett., vol. 90, pp. 166602-1 - 166602-4, 2003.
  28. J. Martinek, Y. Utsumi, H. Imamura, J. Barnas, S. Maekawa, J. König, and G. Schön, "Kondo effect in quantum dots coupled to ferromagnetic leads," Phys. Rev. Lett., vol. 91, pp. 127203, 2003.
  29. J. Martinek, M. Sindel, L. Borda, J. Barnas, J. König, G. Schön, and J. von Delft, "Kondo effect in the presence of itinerant-electron ferromagnetism studied with the numerical renormalization group method," Phys. Rev. Lett., vol. 91, pp. 247202-1 - 247202-4, 2003.
  30. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom,"Electrical spin injection in a ferromagnetic semiconductor heterostructure," Nature, vol. 402, pp. 790-792, 1999.
  31. J. König and A. H. MacDonald, "EPR and ferromagnetism in diluted magnetic semiconductor quantum wells," Phys. Rev. Lett., vol. 91, pp. 077202-1 - 077202-4, 2003.
  32. M. Moreno, A. Trampert, B. Jenichen, L. Däweritz, and K. H. Ploog, "Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters," J. Appl. Phys., vol. 92, no. 8, pp. 4672-4677, Oct. 2002.
  33. M. Oestreich, M. Bender, J. Hübner, D. Hägele, W. W. Rühle, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz, and W. Stolz, "Spin injection, spin transport and spin coherence," Semicond. Sci. Technol., vol. 17, pp. 285-297, 2002.
  34. A. Tackeuchi, O. Wada, and Y. Nishikawa, "Electron spin relaxation in InGaAs/InP multiple-quantum wells," Appl. Phys. Lett., vol. 70, pp. 1131-1133, 1997.
  35. A. V. Kimel, G. V. Astakhov, G. M. Schott, A. Kirilyuk, D. R. Yakovlev, G. Karczewski, W. Ossau, G. Schmidt, L. W. Molenkamp, and Th. Rasing, "Picosecond dynamics of the photoinduced spin polarization in epitaxial (Ga,Mn)As films," Phys. Rev. Lett., vol. 92, pp. 237203-1 - 237203-4, 2004.
  36. H. Honig and E. Stupp, "Electron spin-lattice relaxation in phosphorous-doped silicon,"Phys. Rev. Lett., vol. 58, pp. 275-276, 1958.
  37. M. I. Dyakonov and V. I. Perel, "Spin relaxation of conduction electrons in noncentrosymmetric semiconductors," Sov. Phys. Solid State, vol. 13, pp. 3023-3026, 1971.
  38. J. Kainz, U. Rössler, and R. Winkler, "Temperature dependence of Dyakonov-Perel spin relaxation in zinc blende semiconductor quantum structures," Phys. Rev. B, vol. 70, pp. 195322, Nov. 2004.
  39. Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, "Spin relaxation in GaAs(110) quantum wells," Phys. Rev. Lett., vol. 83, pp. 4196-4199, 1999.
  40. S. Döhrmann, D. Hägele, J. Rudolph, M. Bichler, D. Schuh, and M. Oestreich, "Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects," Phys. Rev. Lett., vol. 93, pp. 147405-1 - 147405-4, 2004.
  41. F. Meier and B. P. Zakharchenya, Optical orientation, Elsevier Science Publ., Amsterdam, 1984.
  42. J. H. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, and K. von Klitzing, "Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor," Nature, vol. 281, pp. 281-286, 2002.
  43. I. Zutic, J. Fabian, and S. Das Sarma, "Spintronics: Fundamentals and applications,"Review of Modern Physics, vol. 76, pp. 323-410, 2004.
  44. R. Winkler, Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems, Springer, Berlin, 2003.
  45. M. W. Wu and H. Metiu, "Kinetics of spin coherence of electrons in an undoped semiconductor quantum well," Phys. Rev. B, vol. 61, pp. 2945-2956, 2000.
  46. E. Y. Sherman, "Random spin-orbit coupling and spin relaxation in symmetric quantum wells," Appl. Phys. Lett., vol. 82, pp. 209-211, 2003.
  47. D. Hägele, M. Oestreich, W. W. Rühle, N. Nestle, and K. Eberl, "Spin transport in GaAs," Appl. Phys. Lett., vol. 73, pp. 1580-1582, 1998.
  48. J. M. Kikkawa and D. D. Awschalom, "Lateral drag of spin coherence in gallium arsenide," Nature, vol. 397, pp. 139-141, 1999.
  49. S. Datta and B. Das, "Electronic analog of the electro-optic modulator," Appl. Phys. Lett., vol. 56, pp. 665-667, 1990.
  50. S. D. Ganichev, V. V. Belkov, L. E. Golub, E. L. Ivchenko, P. Schneider, S. Giglberger, J. Eroms, J. DeBoeck, G. Borghs, W. Wegscheider, D. W. Weiss, and W. Prettl,"Experimental separation of Rashba and Dresselhaus spin-splittings in semiconductor quantum wells," Phys. Rev. Lett., vol. 92, pp. 256601-1 - 256601-4, 2004.
  51. J. P. Lu, J. B. Yau, S. P. Shukla, M. Shayegan, L. Wissinger, U. Rössler, and R. Winkler, "Tunable spin-splitting and spin-resolved ballistic transport in GaAs/AlGaAs two-dimensional holes," Phys. Rev. Lett., vol. 81, no. 6, pp. 1282-1285, 1998.
  52. G. F. Lommer, F. Malcher, and U. Rössler, "Spin splitting in semiconductor heterostructures for B ® 0," Phys. Rev. Lett., vol. 60, pp. 728-731, 1988.
  53. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki, "Gate control of spin-orbit interaction in an inverted In0,53Ga0,47As/In0,52Al0,48As heterostructure," Phys. Rev. Lett., vol. 78, pp. 1335-1338, 1993.
  54. D. Grundler, "Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers," Phys. Rev. Lett., vol. 84, pp. 6074-6077, 2000.
  55. J. B. Miller, D. M. Zumbühl, C. M. Marcus, Y. B. Lyanda-Geller, D. Goldhaber-Gordon, K. Campman, and A. C. Gossard, "Gate-controlled spin-orbit quantum interference effects in lateral transport," Phys. Rev. Lett., vol. 90, pp. 076807-1 - 076807-4, 2003.
  56. A. Ney, C. Pampuch, R. Koch, and K. H. Ploog, "Programmable computing with a single magnetoresistive element," Nature, vol. 425, pp. 485-487, 2003.
  57. A. Slobodskyy, C. Gould, T. Slobodskyy, C. R. Becker, G. Schmidt, and L. W. Molenkamp, "Voltage-controlled spin selection in a magnetic resonant tunneling diode," Phys. Rev. Lett., vol. 90, pp. 246601-1 - 246601-4, 2003.
  58. C. Gould, C. Rüster, T. Jungwirth, E. Girgis, G. M. Schott, R. Giroud, K. Brunner, G. Schmidt, and L. Molenkamp, "Tunneling anisotropic magnetoresistance: A spin- valve-like tunneling magnetoresistance using a single magnetic layer," Phys. Rev. Lett., vol. 93, pp. 117203-1 - 117203-4, 2004.
  59. C. Rüster, T. Borzenko, C. Gould, G. Schmidt, L. W. Molenkamp, X. Liu, T. J. Wojtowicz, J. K. Furdyna, Z. G. Yu, and M. E. Flatte, "Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions," Phys. Rev. Lett., vol. 91, pp. 216602-1 - 216602-4, 2003.
  60. C. Rüster, C. Gould, T. Jungwirth, G. M. Schott, R. Giraud, K. Brunner, G. Schmidt, and L. W. Molenkamp, "Very large tunneling anisotropic magnetoresistance in a (Ga,Mn)As stack," Phys. Rev. Lett., vol. 94, pp. 027203, 2005.
  61. G. Schmidt, G Richter, P. Grabs, D. Ferrand, and L. W. Molenkamp, "Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor," Phys. Rev. Lett., vol. 87, pp. 227203-1 - 227203-4, 2001.
  62. B. T. Jonker, "Polarized optical emission due to decay or recombination of spin-polarized injected carriers," United States Patent 5,874,749, 1993.
  63. J. Rudolph, D. Hägele, H. M. Gibbs, G. Khitrova, and M. Oestreich, "Laser threshold reduction in a spintronic device," Appl. Phys. Lett., vol. 82, pp. 4516-4518, 2003.
  64. S. Hallstein, J. D. Berger, M. Hilpert, H. C. Schneider, W. W. Rühle, F. Jahnke, S. W. Koch, H. M. Gibbs, G. Khitrova, and M. Oestreich, "Manifestation of coherent spin precession in stimulated semiconductor emission dynamics," Phys. Rev. B, vol. 56, pp. R7076-7079, 1997.
  65. J. R. Petta, A. C. Johnson, J. M. Taylor, E. A. Laird, A. Yacoby, M. D. Lukin, C. M. Marcus, M. P. Hanson, and A. C. Gossard, "Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots," Science, vol. 309, no. 5744, pp. 2180, 2005.
  66. A. Zrenner, E. Beham, S. Stufler, F. Findeis, M. Bichler, and G. Abstreiter, "Coherent properties of a two-level system based on a quantum-dot photodiode," Nature, vol. 418, pp. 612-614, 2002.
  67. M. N. Leuenberger, D. Loss, and D. D. Awschalom, "Quantum information processing with large nuclear spins in GaAs semiconductors," Phys. Rev. Lett., vol. 89, pp. 207601-1- 207601-4, 2002.
  68. M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, and J. J. Finley, "Optically programmable spin memory using semiconductor quantum dots," Nature, vol. 432, pp. 81-84, 2004.

Dates:


tba.

Recent publication(s):

J. L. Cheng, M. W. Wu, and J. Fabian:  "Theory of the spin relaxation of conduction electrons in silicon" Phys. Rev. Lett. 104, 016601 (2010)

P.S. Eldridge, J. Hübner, S. Oertel, R.T. Harley, M. Henini, and M. Oestreich:  "Spin-orbit fields in asymmetric (001)-oriented GaAs/AlxGa1-xAs quantum wells" Physical Review B (Rapid Comm.) 83, 041301(R) (2011)

J. Karch et al.:  "Dynamic Hall Effect Driven by Circularly Polarized Light in a Graphene Layer" Phys. Rev. Lett. 105, 227402 (2010)